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觸控用化學強化玻璃: 厚度:厚度:0.33mm/0.4mm/0.5mm/0.7mm/0.85mm/0.9mm/1.0mm/1.1mm/1.5mm/1.6mm/1.8mm/2.8mm
可生產尺寸:355*406mm/355*431mm/400*300mm/470*370mm/500*400mm/920*730mm/1300*1100mm/1850*1500mm
應力值:>400MPa
置換層:6-10μm 或 >12μm
觸控用矽酸鹽高強化玻璃(大猩猩Gorilla Glass 熊貓Panda glass 暴龍): 厚度:0.33mm/0.4mm/0.5mm/0.7mm/0.85mm/0.9mm/1.0mm/1.1mm/1.5mm/1.6mm/1.8mm/2.8mm
可生產尺寸:355*406mm/355*431mm/400*300mm/470*370mm/500*400mm/920*730mm/1300*1100mm/1850*1500mm
應力值:>550MPa >650MPa
置換層:35-55μm
4"silicon wafer
Diameter:100mm
Thickeness:525±25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:1-10ohm-cm
Flate:32.5±2.5mm
Single side polished
6"silicon wafer
Diameter:150mm
Thickeness:650-700±25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:1-10ohm-cm
Flate:32.5±2.5mm
Single side polished
8"silicon wafer
Diameter:200mm
Thickeness:725+/-25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:1-100ohm-cm
Single side polished
12"silicon wafer
Diameter:300mm
Thickeness:725+/-25um
Type:P
Orientation:<100>
Resistivity:1-100ohm-cm
Double side polished
8"CZ Prime Polished wafer
Diameter:200±1mm
Thickeness:725±20um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:<0.0035ohm-cm
Flate:
Notch Ang:Per SEMI
Notch Dep:Per SEMI
Location:(100)+/-1
Frontside:Mirror Polish
Backside:BSD+LTO
TTV:<10um
Bow/Warp:<90um
Particle:≧0.20um@≦25ppw
8"CZ Prime Polished wafer
Diameter:150±0.5mm
Thickeness:625±25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:<0.004-0.007ohm-cm
Flate:
Second Flat:None
Primary Flat Location:{110}± 1°
Primary Flat Length:57.5± 2.5 mm
Frontside:Mirror Polish
Backside:LOT4000-8000A
TTV:< 10um
Bow/Warp:<60um
Particle:≧0.30um@ ≦15ppw
8"CZ Prime Polished wafer
Diameter:150±0.5mm
Thickeness:625±25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:0.0013-0.0025ohm-cm
Flate:
Second Flat:None
Primary Flat Location:{110}± 1°
Primary Flat Length:57.5± 2.5 mm
Frontside:Mirror Polish
Backside:LOT4500-5500A
TTV:<10um
Bow/Warp:<40um
Particle:≧0.30um@≦ 5ppw
8"CZ Prime Polished wafer
Diameter:200±1mm
Thickeness:725±20um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:0.003-0.005ohm-cm
Flate:
Notch Ang:Per SEMI
Notch Dep:Per SEMI
Location:(100)+/-1
Frontside:Mirror Polish
Backside:BSD+LTO
TTV:<4um
Bow/Warp:<90um
Particle:≧0.20um@ ≦25ppw
6 Inch Prime wafer 10 PCS
Diameter: 150 mm
Thickeness: 650 ± 25 um
Type/Dopant: P / Boron
Orientation: <100>
Resistivity: 10000 ohm-cm
Single side polished
6 Inch Prime wafer 10 PCS
Diameter: 150 mm
Thickeness: 650 ± 25 um
Type/Dopant: P / Boron
Orientation: <100>
Resistivity: 10000 ohm-cm
Single side polished
-------------------------------------------------
8 Inch Prime wafer 12 PCS
Diameter: 200 mm
Thickeness: 725+ / -25 um
Type/Dopant: P / Boron Orientation: <100>
Resistivity: 1以下 ohm-cm
Single side polished
-------------------------------------------------
4 Inch 單拋單氧 wafer 10 PCS
Diameter: 100 mm
Thickeness: 500 ± 25 um
Type/Dopant: N / Boron
Orientation: <100>
Resistivity: 35-40 ohm-cm
Single side polished oxidation : 2um
-------------------------------------------------
8 Inch Prime wafer 12 PCS
Diameter: 200 mm
Thickeness: 725+ / -25 um
Type/Dopant: P / Boron Orientation: <100>
Resistivity: 1以下 ohm-cm
Single side polished
-------------------------------------------------
4 Inch 單拋單氧 wafer 10 PCS
Diameter: 100 mm
Thickeness: 500 ± 25 um
Type/Dopant: N / Boron
Orientation: <100>
Resistivity: 35-40 ohm-cm
Single side polished oxidation : 2um
Silicon wafer
2”4”6”8”12”
Diameter
50.8mm
100mm
150mm
200mm
300mm
Type
P-type or N-type
Dopant
Boron/Arsenic/Phosphorus/Antimony
Orientation
<100>,<110>,<111>
Resistivity
0.0001 ohm-cm ~30K ohm-cm
SOI (Silicon on insulation) wafer
Diameter
3"~8"
Handle Layer Specification
Thickness
250-800μm
Type P or N
Dopant Boron, Sb or Phos. As.
Resistivity 0.001~>1,000Ω-cm
Growth Method CZ or FZ
Orientation<100>,<110>,<111>
Backside finish
Lapped/Etched; Polished
Buried Oxide Specification
Oxide grown on
Handle, Device or Both
BOX thickness0.2-5μm
Device Layer Specification
Thickness2-300μm
Type P or N
Dopant Boron, Sb or Phos. As.
Resistivity 0.001~>1,000Ω-cm
Growth Method CZ or FZ
Orientation <100>,<110>,<111>
Sapphire wafer2”4”6”
Diameter50.8mm100mm150mm
Thicknessstandard
OrientationC, A, R
Warp≦25μm
Bow≦25μm
TTV≦25μm
Front Surface
EPI polished(less than 5A)
Back SurfaceFine grind or polished
Glass / QuartSpecification
Glass Soda Lime/ Borofloat / Eagle XG / Others
Quartz Fused Silica, Quartz Crystal
Size2”~8”, Other shapes and sizes also available
Thickness0.5~1.8 mm, Made-to-order
Surface finish one side or two sides polished
Flatas SEMI. Standard
TTV<= 20 μm
Surface roughness
Ra <= 15 A
LiTaO3 / LiNbO3 Wafer
Black-LT and Black-LN
Specification of Bulk resistivity, Bulk conductivity
Black-LT
Standard Black
Super Black
Bulk Resistivity(Ω-cm)
0.9E+11~9.9E+11
1.0E+11~9.9E+10
Bulk Conductivity(ΩE-1-cmE-1)
1.11E-11~1.11E-12
1.0E-10~1.11E-11
Black-LN
Standard Black
Bulk Resistivity(Ω-cm)
1.0E+10~9.9E+10
Bulk Conductivity(ΩE-1-cmE-1)
1.11E-11~1.11E-12
Typical Specifications
Black-LT wafers
Orientation Diameter(mm) Thickness(mm) Surface finish
(+)plane (-)plane
36 Y-cut
38.7 Y-cut
42 Y-cut
48 Y-cut
X-112 Y-cut 76.2
100.0
0.25
0.35
0.50
Mirror
Polished
Black-LN wafers
Orientation Diameter(mm) Thickness(mm) Surface finish
(+)plane (-)plane
Y-Zcut
41 Y-cut
64 Y-cut
127.86 Y-cut 76.2
100.0
0.25
0.35
0.50 Mirror
Polished
EPI Wafer (Silicon Epitaxial Wafer) / SiC Wafer / GaAs Wafer / InP Wafer / Others
Glass, 玻璃 (Glass), 石英 (Quartz), 矽 (Silicon), 與特殊材料
矽晶圓 Silicon wafer
SOI wafer, CZ & FZ, P & N type, 100 & 111, Low & High resistance, Prime & Test grade.
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